职称：新加坡工程院院士、长江学者特聘教授

邮箱：soon.yoon@bitzh.edu.cn ， soon.yoon@bit.edu.cn

所在学科：光电信息工程

研究方向：

1.  海洋光学中光电子和量子电子器件中热传播的三维模拟

2.  光电子和量子电子器件中的物理

3.  海洋环境中光电子和量子电子器件的光电特性

4.  半导体缺陷表征

个人简历：

2026.04-至今 北京理工大学（珠海）教授

2024年3月-2025年3月，特聘访问科学家，博升光电有限公司；

2018年10月-2026年3月，正教授，新加坡国立大学；

2002年6月-2018年10月，正教授，新加坡南洋理工大学；

2012年1月，获评新加坡工程院院士；

1998年1月-2002年5月，副教授，新加坡南洋理工大学；

1992年1月-1997年12月，南洋理工大学高级讲师；

1989年10月-1991年12月，讲师，新加坡南洋技术学院；

1986年9月-1989年10月，意大利阿格拉特市SGS-汤姆逊微电子中心研发实验室工艺工程师；

1986年9月-1988年7月，意大利阿格拉特市SGS-汤姆逊微电子中心研发实验室研究工程师 （兼任）;

1986年7月，英国威尔士大学，电气工程与物理电子学专业，博士；

1983年7月，英国威尔士大学，电气工程专业，学士。

学术成果：

（一）学术论文

1.  J.S.Zhang, R.Shao, H.W.Xu, K.H.Tan, S. Wicaksono, Q.W.Kong, G.Zhang, C.Sun, Y.Chen, A.Danner, S. F. Yoon and X.Gong, “Flexible InGaAs/InAlAs avalanche photodiodes for short-wave infrared detection”, Nature Commun 16, 9367 (2025).

2.  W. K. Loke, K. H. Tan, S. Wicaksono and S. F. Yoon, “Carrier mobility dependence of indium antimonide-bismide on carrier concentration, temperature, and bismuth composition grown on semi-insulating gallium arsenide substrate”,Semiconductor Science and Technology,Vol. 39, 2024, No. 065008.

3.  Y.H.Jin, B.F.Zhu, K.H.Tan, S.Wicaksono, C.Sirtori, S.F.Yoon, and Q.J.Wang, “Supersymmetric quantum cascade laser array”,Applied Physics Letters,Vol. 124(11), 2024, No. 111109.

4.  W.K.Loke, K.H.Tan, S.Wicaksono, and S.F.Yoon, “Semi-empirical growth model of InSbBi grown by molecular beam epitaxy”,Materials Science and Engineering: B,Vol. 300, 2024, No. 117067.

5.  K.H. Tan, W.K. Loke, S. Wicaksono, and S.F.Yoon, “Growth of droplet-free InSbBi on GaAs substrate”,AIP Advances,Vol. 13, 2023, No. 125221.

6.  W.K. Loke. Y, Wang, H. Xie, H. T. Tan, S. Bao, K. H. Lee, L. Khaw, K. Lee, C.S. Tan, G. I. Ng, E.A. Fitzgerald, and S.F.Yoon, “Layer-transferred gallium arsenide heterojunction bipolar transistor on insulator substrate”,Materials Science and Engineering: B, Vol. 296, 2023, No. 116665.

7.  J. Zhang, H. Xu, G. Zhang, Y. Chen, H. Wang, K.H. Tan, S. Wicaksono, C. Sun, Q. Kong, C. Wang, C. Ci Wen Lim, S.F. Yoon, X. Gong, “Hybrid and heterogeneous photonic integrated near-infrared InGaAs/InAlAs single-photon avalanche diode”, Quantum Science and Technology,Vol. 8(2), 2023, No. 025009.

8.  F. Sun, J. Li, K.H. Tan, S. Wicaksono, Y.D. Chua, C. Wang, M. Dai, V.Q.G. Roth, S.F. Yoon, Q.J. Wang, “Beam combining of a broadly and continuously tunable quantum cascade laser” Optics Express,Vol. 30(20), 2022, pp. 35999-36009.

9.  J. Li, F. Sun, Y. Jin, Y.D. Chua, K.H. Tan, S. Wicaksono, C. Sirtori, S.F. Yoon, Q.J. Wang, “Widely tunable single-mode slot waveguide quantum cascade laser array”,Optics Express,Vol. 30(1), 2022, pp. 629-640.

10. J. Zhang, H. Wang, G. Zhang, K.H. Tan, S. Wicaksono, H. Xu, C. Wang, Y. Chen, Y. Liang, C.C. Wen Lim, S.F.Yoon, X. Gong, “High-performance InGaAs/InAlAs single-photon avalanche diode with a triple-mesa structure for near-infrared photon detection”,Optics Letters, Vol. 46(11), 2021, pp. 2670-2673.

11. Y. Wang, W.K. Loke, Y. Gao, K.H. Lee, K.E. Kian Lee, C.L. Gan, C.S. Tan, E.A. Fitzgerald, S.F.Yoon, “CMOS-Compatible Ti/TiN/Al Refractory Ohmic Contact for GaAs Heterojunction Bipolar Transistors Grown on Ge/Si Substrate”,IEEE Transactions on Electron Devices,Vol 68(12), 2021, pp. 6065-6068.

12. K.H. Tan, W.K. Loke, S. Wicaksono, S.F. Yoon, “Growth of InAs0.32Sb0.68 on GaAs using a thin GaInSb buffer and strain superlattice layers”,AIP Advances,Vol 11(4), 2021, No. 045203.

13. Y. Jin, J. Li, Y.D. Chua, K.H. Tan, S. Wicaksono, C. Sirtori, S.F. Yoon, Q.J. Wang, “Long wavelength (λ > 13 μm) quantum cascade laser based on diagonal transition and three-phonon-resonance design”,Applied Physics Letters,Vol. 119(13), 2021, No. 131105.

（二）书刊

1.  H.T.Pham, S.F.Yoon and K.P.Lim, “Fabrication and Characterization of Dilute Nitride Indium Antimonide for Long Wavelength Infrared Applications”, Nova Science Publishers, Inc., 400 Oser Avenue, Suite 1600, Hauppauge, NY 11788, USA. 2012, ISBN 978-1-62100-940-5 (Chemistry Research and Applications).

2.  Z.G.Xu, K.Youcef-Toumi and S.F.Yoon, “Applications and Nanomanufacturing of Modern Microfluidic Devices”, Chapter 4 in "Advances in Nanotechnology”, Vol.3, Editors: Zacharie Bartul and Jérôme Trenor, Nova Science Publishers, Inc., 400 Oser Avenue, Suite 1600 Hauppauge, NY 11788, USA. ISBN: 978-1-61668-161-6, 2010. pp.163-198.

3.  C.Y.Ngo, S.F.Yoon and S.J.Chua “Quantum dot technology for broadband light sources”, in “Quantum Dots: Research, Technology and Applications”, Ed. Randolf W. Knoss, Nova Science Publishers, New York, December 2008, pp.203-244.

4.  S.F.Yoon, S.Wicaksono, W.K.Loke, C.Y.Liu, K.H.Tan, W.J.Fan and Z.Z.Sun “Growth and characterization of dilute nitride materials for lasers and photodiodes” in "Nitrides and Dilute Nitrides: Growth, Physics and Devices”, 2007: 179-227, ISBN: 978-81-7895-250-5 Editor: Javier Miguel-Sánchez, Transworld Research Network.

5.  S.F.Yoon, Z.Z.Sun and K.C.Yew, “Recent Progress in Dilute Nitride Quantum Dots”, Chapter 5, pp.157-178, DILUTE NITRIDE SEMICONDUCTORS, Ed. M.Henini, Elsevier Press, 2005, United Kingdom

6.  S.F.Yoon, Q.F.Huang and Rusli “Electrical properties of metal-containing a-C:H”, Chapter 6.6, pp.229-232, Properties of Amorphous Carbon, R.Silva (Ed.),IEE INSPEC: Electronic Materials Information Service (EMIS) Series, 2003, London

7.  Rusli, S.F.Yoon and Q.F.Huang, “Hydrogenated a-C optical coatings”, Chapter 10.10, pp.344-348, Properties of Amorphous Carbon, R.Silva (Ed.), IEE INSPEC: Electronic Materials Information Service (EMIS) Series, 2003, London

（三）专利

1.  S.F.Yoon, D.W.Xu and C.Y.Yeo, “Apparatus and method for separating a stacked arrangement”, Technology Disclosure (TD) submitted to NTU, Nanyang Innovation and Enterprise Office (NIEO) on 13 January 2012. US patent application no. 14/390,239 (PCT/SG2013/000150). Korea patent application no. 10-2014-7031802 (PCT/SG2013/000150). China patent application no. 201380019900.4 (PCT/SG2013/000150). European patent application no. 13 782 595.6 (PCT/SG2013/000150).Singapore patent (granted 14 Oct 2015), PCT/SG2013/000150.US Patent No: US 9,522,521 B2 Date of Patent: Dec 20, 2016.

2.  S.F.Yoon, K.H.Tan, W.K.Loke, S.Wicaksono, T.K.Ng, “Method for fabricating GaNAsSb semiconductor”,US patent no.US 8,202,788 B2 granted on 19 June 2012.

荣誉奖励：

1.  Award from SEMI （Semiconductor Equipment Manufacturers Industry) for “Significant contribution to SEMI in Singapore Semiconductor Industry”

2.  Distinguished Service Award from Institute of Microelectronics (IME) for “Dedicated service and invaluable contributions to Institute of Microelectronics” as Board Member.

3.  Commendation Award for service as Board Member of the Temasek Laboratory. Commendation Award presented by Minister Teo Chee Hean (Singapore Minister for Defence).

4.  Appreciation Award from A*STAR Science and Engineering Research Council (SERC) for distinguished service as the Chairman of the Science & Technology 2010 Technology-Scan Committee on Semiconductor and Photonics Technology.

5.  Commendation Award from Minister Lim Hng Kiang (Singapore Minister for Trade and Industry) for distinguished service to the A*STAR Science & Technology 2010 Plan.

学术兼职及其他：

国际期刊审稿人

(1)Journal of Applied Physics (American Institute of Physics)

(2)Applied Physics Letters (American Institute of Physics)

(3)Diamond & Related Materials (Elsevier)

(4)Microelectronics Journal (Elsevier)

(5)Thin Solid Films (Elsevier)

(6)Photonics Technology Letters (IEEE)

(7)Nanoscale Research Letters (Springer)

(8)European Journal of Applied Physics (EDP Sciences)

(9)IEEE Photonics Technology Letters

(10)IEEE Electron Device Letters